structural properties of post annealed ito thin films at different temperatures

نویسندگان

negin manavizadeh

alireza khodayari

ebrahim asl soleimani

sheida bagherzadeh

mohammad hadi maleki

چکیده

indium tin oxide (ito) thin films were deposited on glass substrates by rf sputtering using an ito ceramic target (in2o3-sno2, 90-10 wt. %). after deposition, samples were annealed at different temperatures in vacuum furnace. the post vacuum annealing effects on the structural, optical and electrical properties of ito films were investigated. polycrystalline ito films have been analyzed in wide optical spectrum, x-ray diffraction and four point probe methods. the results show that increasing the annealing temperature improves the crystallinity of the films. the resistivity of the deposited films is about 19×10-4 ωcm and falls down to 7.3×10-5 ωcm as the annealing temperature is increased to 500 °c in vacuum.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Structural Properties of Post Annealed ITO Thin Films at Different Temperatures

Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline...

متن کامل

The Influence of Metallic Inter-layer on the Structural, Optical and Electrical Properties of ITO Thin Films Annealed at Different Temperatures

In this work new transparent conductive films that had a sandwich structure composed of ITO/metal/ITO multilayer films were prepared by reactive thermal evaporation technique on glass substrates without intentional substrate heating. Ag, Au and Cu thin films have been used as intermediate metal layer. The thickness of each layer in the ITO/metal/ITO films was kept constant at 50nm/10nm/40nm. Th...

متن کامل

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Bismuth titanate (Bi4Ti3O12—BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes at 700 8C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air...

متن کامل

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

متن کامل

Structural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films

Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

منابع من

با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید


عنوان ژورنال:
iranian journal of chemistry and chemical engineering (ijcce)

ناشر: iranian institute of research and development in chemical industries (irdci)-acecr

ISSN 1021-9986

دوره 28

شماره 2 2009

میزبانی شده توسط پلتفرم ابری doprax.com

copyright © 2015-2023